Platy alpha-SiC single crystals grown from solvent silicon /
Yoshizo Inomata, Zenzaburo Inoue, Mamoru Mitomo.

Description

Main Author

Inomata, Yoshiz©Æo

Related Names

Mitomo, Mamoru, author.
Inoue, Zenzaburo, author.
Air Force Cambridge Research Laboratories (U.S.)

Language(s)

English

Published

L.G. Hanscom Field, Bedford, Massachusetts : Air Force Cambridge Research Laboratories, Air Force Systems Command, United States Air Force, 1972.

Subjects

Silicon compounds.
Silicon carbide.
Crystal growth.
Silicon compounds.
Crystal growth.
Silicon carbide.

Summary

Platy alpha-SiC crystals of 2-3 mm in diameter were grown in high- density graphite crucibles with high-purity solvent silicon after 5 hours' heating at 2200C. The crystals obtained consisted mainly of 6H. When compared with crystals grown by sublimation, the probability of forming twins with a 70 degrees 30 minutes angle between the bases was small. Some of the crystals contained very thin silicon layers, but these regions were generally localized and fine scattered carbon particle inclusions such as seen in crystals prepared by sublimation were not observed. The relation between the polarity of the basal faces and it is suggested that there is a reverse relation between the crystals grown from solvent silicon and those prepared by sublimation.

Note

Translation supported by the Air Force Cambridge Research Laboratories, Air Force Systems Command, United States Air Force (H.G. Hanscom Field, Mass.), and translated by the Oriental Science Research Library of Emmanuel College, Boston, Massachusetts, under Contract F19628-71-C-0121.
Translated from Ceramic Society of Japan Journal (Yogyo Kyokai-Shi). v. 79, n. 8, pp. 259-263.
AFCRL Research Library.
"12 April 1972."

Physical Description

vi, 10 pages : illustrations ; 28 cm.

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