On the Wurtzite-Type SiC whiskers obtained by sublimation and the thermal stability of basic SiC polytypes /
Yoshizo Inomata, Zenzaburo Inoue.
Description
- Language(s)
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English
- Published
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L.G. Hanscom Field, Bedford, Massachusetts : Air Force Cambridge Research Laboratories, Air Force Systems Command, United States Air Force, 1971.
- Summary
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2H-type SiC whiskers were obtained using the sublimation method. From the results of heating a powdered mixture of high-purity silicon and graphite, the thermal stability of basic SiC polytypes was discussed. The condlusions are summarized as follows: Beta-SiC crystals grow in the entire temperature range under conditions of high supersaturation; The initial phase which appears from heating Beta-SiC is mainly 6H above 1,600C and 4H or 2H below 1,400C; 2H, 3C, and 6H are stable in the range below 1,400C, 1,400-1,600C, 1,600-2,100C, and above 2,100C, respectively. 15R is unstable throughout the entire temperature range.
- Note
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Translation supported by the Air Force Cambridge Research Laboratories, Air Force Systems Command, United States Air Force (L.G. Hanscom Field, Mass.), and translated by the Oriental Science Research Library of Emmanuel College, Boston, Massachusetts, under Contract F19628-68-C-0251.
Translated by the Ceramic Society of Japan Journal (Yogyo Kyokai-Shi). v. 78, n. 4, pp. 133-138, 1970.
AFCRL Research Library.
AD0724103 (from http://www.dtic.mil).
"17 March 1971."
- Physical Description
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vi, 16 pages :
illustrations ;
28 cm.
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