On the formation of the 15R type in the beta-alpha transformation of SiC /
Yoshizo Inomata, Zenzaburo Inoue, Kazunori Kijima.

Description

Main Author

Inomata, Yoshiz©Æo

Related Names

Kijima, Kazunori, author.
Inoue, Zenzaburo, author.
Air Force Cambridge Research Laboratories (U.S.)

Language(s)

English

Published

L.G. Hanscom Field, Bedford, Massachusetts : Air Force Cambridge Research Laboratories, United States Air Force, 1970.

Subjects

Twinning (Crystallography)
Silicon carbide.
Phase transformations (Statistical physics)
Crystals > Crystals / Structure.
Crystal growth.
Phase transformations (Statistical physics)
Twinning (Crystallography)
Crystals > Crystals / Structure.
Crystal growth.
Silicon carbide.

Summary

The transformation of high-purity beta-SiC to alpha-SiC was studied experimentally in the temperature range from 2100C to 2300C.

Note

Translation supported by the Air Force Cambridge Research Laboratories, United States Air Force (L.G. Hanscom Field, Mass.), and translated by the Oriental Science Research Library at Emmanuel College, Boston, Massachusetts, under Contract F19628-68-C-0251.
Translated from Ceramic Society of Japan: Journal (Yogyo Kyokai-Shi), v. 77, n. 9, pp. 313-318, 1969.
AFCRL Research Library.
AD0712021 (from http://www.dtic.mil).
"13 July 1970."

Physical Description

vi, 14 pages : illustrations, tables ; 28 cm.

Locate a Print Version

Find in a library

Viewability