Effect of aluminum doping on the thermal stability of 4H- and 6H-SiC /
Mamoru Mitomo, Yoshizo Inomata, Mahito Kumanomido.

Description

Main Author

Mitomo, Mamoru

Related Names

Kumanomido, Mahito, author.
Inomata, Yoshizō, author.
Air Force Cambridge Research Laboratories (U.S.)

Language(s)

English

Published

L.G. Hanscom Field, Bedford, Massachusetts : Air Force Cambridge Research Laboratories, Air Force Systems Command, United States Air Force, 1971.

Subjects

Silicon carbide.
Crystals > Crystals / Structure.
Crystal growth.
Aluminum.
Aluminum.
Crystals > Crystals / Structure.
Crystal growth.
Silicon carbide.

Summary

The effect of aluminum doping on the thermal stability of basic SiC polytypes was studied experimentally in the range 2,000-2,400C. The doping was performed by adding alumina to a mixture of powdered silicon and carbon. The relative amount of 4H increased with increasing content of aluminum in the SiC powder. The same aluminum effect was shown when high-purity alpha-SiC was used. The stability of the 4H structure by aluminum doping was attributed to lattice distortion. The 15R-type was found quasi-stable under these conditions.

Note

Translation supported by the Air Force Cambridge Research Laboratories, Air Force Systems Command, United States Air Force (L.G. Hanscom Field, Mass.), and translated by the Oriental Science Research Library of Emmanuel College, Boston, Massachusetts, under Contract F19628-68-C-0251.
Translated from Ceramic Society of Japan Journal (Yogyo Kyokai-Shi). v. 78, n. 7; pp. 224-228, 1970.
AFCRL Research Library.
AD0724102 (from http://www.dtic.mil).
"17 March 1971."

Physical Description

vi, 16 pages : illustrations, tables ; 28 cm.

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