Polytypes of SiC crystals grown from molten silicon /
Yoshizo Inomata [and 3 others].

Description

Main Author

Inomata, Yoshiz©Æo

Related Names

Air Force Cambridge Research Laboratories (U.S.)

Language(s)

English

Published

L.G. Hanscom Field, Bedford, Massachusetts : Air Force Cambridge Research Laboratories, United States Air Force, 1970.

Subjects

Silicon carbide.
Crystals > Crystals / Structure.
Crystallography.
Crystal growth.
Crystallography.
Crystals > Crystals / Structure.
Crystal growth.
Silicon carbide.

Summary

The relationship between the polytypes of SiC and the supersaturation of the solution has been studied at 1800C with the synthetic method using molten silicon.

Note

Translation supported by the Air Force Cambridge Research Laboratories, Office of Aerospace Research, United States Air Force (L.G. Hanscom Field, Mass.), and translated by the Oriental Science Research Library of Emmanuel College, Boston, Massachusetts, under Contract F19628-68-C-0251.
Translated from Ceramic Association of Japan: Journal (Yogyo Kyokai-Shi), v. 77, n. 3, pp. 83-88, 1969.
AFCRL Research Library.
AD0712022 (from http://www.dtic.mil).
"19 August 1970."

Physical Description

vi, 12 pages : illustrations, tables ; 28 cm.

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