On the formation of the 15R type in the beta-alpha transformation of SiC

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086 0 ‡aD 301.45/64:82
088 ‡aAD 0712021
088 ‡aAFCRL 70-405
100 1 ‡aInomata, Yoshiz©Æo, ‡eauthor.
245 1 0 ‡aOn the formation of the 15R type in the beta-alpha transformation of SiC / ‡cYoshizo Inomata, Zenzaburo Inoue, Kazunori Kijima.
264 1 ‡aL.G. Hanscom Field, Bedford, Massachusetts : ‡bAir Force Cambridge Research Laboratories, United States Air Force, ‡c1970.
300 ‡avi, 14 pages : ‡billustrations, tables ; ‡c28 cm.
336 ‡atext ‡btxt ‡2rdacontent
337 ‡aunmediated ‡bn ‡2rdamedia
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490 0 ‡aAFCRL ; ‡v70-0405
490 0 ‡aTranslations ; ‡vNo. 82
500 ‡aTranslation supported by the Air Force Cambridge Research Laboratories, United States Air Force (L.G. Hanscom Field, Mass.), and translated by the Oriental Science Research Library at Emmanuel College, Boston, Massachusetts, under Contract F19628-68-C-0251.
500 ‡aTranslated from Ceramic Society of Japan: Journal (Yogyo Kyokai-Shi), v. 77, n. 9, pp. 313-318, 1969.
500 ‡aAFCRL Research Library.
500 ‡aAD0712021 (from http://www.dtic.mil).
500 ‡a"13 July 1970."
504 ‡aIncludes bibliographical references (pages 13-14).
520 ‡aThe transformation of high-purity beta-SiC to alpha-SiC was studied experimentally in the temperature range from 2100C to 2300C.
538 ‡aMode of access: Internet.
650 7 ‡aTwinning (Crystallography) ‡2fast ‡0(OCoLC)fst01159850
650 7 ‡aSilicon carbide. ‡2fast ‡0(OCoLC)fst01118657
650 7 ‡aPhase transformations (Statistical physics) ‡2fast ‡0(OCoLC)fst01060410
650 7 ‡aCrystals ‡xStructure. ‡2fast ‡0(OCoLC)fst00884694
650 7 ‡aCrystal growth. ‡2fast ‡0(OCoLC)fst00884619
650 0 ‡aPhase transformations (Statistical physics)
650 0 ‡aTwinning (Crystallography)
650 0 ‡aCrystals ‡xStructure.
650 0 ‡aCrystal growth.
650 0 ‡aSilicon carbide.
700 1 ‡aKijima, Kazunori, ‡eauthor.
700 1 ‡aInoue, Zenzaburo, ‡eauthor.
710 2 ‡aAir Force Cambridge Research Laboratories (U.S.)
730 0 ‡aTechnical Report Archive & Image Library (TRAIL)
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