A unique high-temperature, high-pressure crystal growth system for silicon carbide /
J.R. Littler [and 4 others].

Description

Main Author

Littler, J. R.

Related Names

Berman, I., author.
Hawley, J. J., author.
Ryan, C. E. (Charles Edward), 1938-, author.
Marshall, Robert C., author.
Air Force Cambridge Research Laboratories (U.S.)

Language(s)

English

Published

L.G. Hanscom Field, Bedfor, Massachusetts : Air Force Cambridge Research Laboratories, Air Force Systems Command, United States Air Force, 1973.

Subjects

Silicon carbide.
High temperatures.
High pressure (Technology)
Furnaces.
Crystal growth.
High pressure (Technology)
High temperatures.
Furnaces.
Crystal growth.
Silicon carbide.

Summary

A high-pressure, high-temperature furnace system is described for crystal growth experiments using crucibles up to 13 cm in diameter and 26 cm high. The vertical temperature gradient is electronically controlled during growth such that the ends of the crucible can be maintained at temperatures above or below the crucible center. Temperatures up to 2800C can be maintained at pressures up to 50 atmospheres. A vacuum capability up to .000001 torr at 1800C has been incorporated into the system. Single crystals of alpha silicon carbide grown in this system at 2600C are described to illustrate its use. (Author).

Note

Research supported by the Air Force Cambridge Research Laboratories, Air Force Systems Command, United States Air Force, L.G. Hanscom Field, Bedford, Massachusetts.
Solid State Sciences Laboratory Project 5620.
AD0759786 (From http://www.dtic.mil).
"24 January 1973."

Physical Description

vi, 11 pages : illustrations ; 28 cm.

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