The influence of annealing on thin films of beta SiC /
Irvin Berman [and three others].

Description

Main Author

Berman, Irvin

Related Names

Littler, James R., author.
Marshall, Robert C., author.
Ryan, C. E. (Charles Edward), 1938-, author.
Air Force Cambridge Research Laboratories (U.S.)

Language(s)

English

Published

L.G. Hanscom Field, Massachusetts : Air Force Cambridge Research Laboratories, Air Force System Command, United States Air Force, 1972

Subjects

Silicon carbide.
Crystals > Crystals / Structure.
Crystal growth.
Annealing of crystals.
Annealing of crystals.
Thin films.
Vapor-plating.
Crystal growth.
Crystals > Crystals / Structure.
Silicon carbide.

Summary

Thin films of beta silicon carbide were prepared on alpha silicon carbide substrates by the chemical vapor deposition (CVD) technique involving the hydrogen reduction of silane and propane. The films were prepared under a variety of conditions and subsequently subjected to thermal annealing cycles between 1600 degrees C and 2000 degrees C. It is shown that the single crystallinity of the beta films improved with continued annealing. The beta polytype was found to be stable over the entire range of temperatures studied.

Note

Research supported by the Air Force Cambridge Research Laboratories, Air Force Systems Command, United States Air Force, L.G. Hanscom Field, Bedford, Massachusetts.
Solid State Sciences Laboratory Project 5620.
AD0755792 (from http://www.dtic.mil).
"19 December 1972."

Physical Description

vi, 11 pages : illustrations ; 28 cm.

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