| LDR | 03206cam a2200625Ii 4500 | ||
| 001 | 102893630 | ||
| 003 | MiAaHDL | ||
| 005 | 20230928000000.0 | ||
| 006 | m d | ||
| 007 | cr bn ---auaua | ||
| 008 | 090415e197301 vaua bt f000 0 eng d | ||
| 019 | ⊔ | ⊔ | ‡a28918316 |
| 035 | ⊔ | ⊔ | ‡a(MiU)99187626098306381 |
| 035 | ⊔ | ⊔ | ‡asdr-miu.99187626098306381 |
| 035 | ⊔ | ⊔ | ‡a(OCoLC)318532436 |
| 035 | ⊔ | ⊔ | ‡a(GWLA)gwla ocn318532436 |
| 040 | ⊔ | ⊔ | ‡aLHL ‡beng ‡erda ‡cLHL ‡dOCLCQ ‡dFUG ‡dOAL ‡dOCLCF ‡dOCLCQ ‡dCOD ‡dTRAAL |
| 049 | ⊔ | ⊔ | ‡aMAIN |
| 050 | ⊔ | 4 | ‡aQC1 ‡b.U54 no.73-0074 |
| 086 | 0 | ⊔ | ‡aD301.45/4-3:TR-73-0074 |
| 086 | 0 | ⊔ | ‡aD 301.45/10:181 |
| 088 | ⊔ | ⊔ | ‡aAD 759786 |
| 088 | ⊔ | ⊔ | ‡aAFCRL TR 73-74 |
| 100 | 1 | ⊔ | ‡aLittler, J. R., ‡eauthor. |
| 245 | 1 | 2 | ‡aA unique high-temperature, high-pressure crystal growth system for silicon carbide / ‡cJ.R. Littler [and 4 others]. |
| 264 | ⊔ | 1 | ‡aL.G. Hanscom Field, Bedfor, Massachusetts : ‡bAir Force Cambridge Research Laboratories, Air Force Systems Command, United States Air Force, ‡c1973. |
| 300 | ⊔ | ⊔ | ‡avi, 11 pages : ‡billustrations ; ‡c28 cm. |
| 336 | ⊔ | ⊔ | ‡atext ‡btxt ‡2rdacontent |
| 337 | ⊔ | ⊔ | ‡aunmediated ‡bn ‡2rdamedia |
| 338 | ⊔ | ⊔ | ‡avolume ‡bnc ‡2rdacarrier |
| 490 | 0 | ⊔ | ‡aAFCRL-TR ; ‡v73-0074 |
| 490 | 0 | ⊔ | ‡aInstrumentation Papers ; ‡vNo. 181 |
| 500 | ⊔ | ⊔ | ‡aResearch supported by the Air Force Cambridge Research Laboratories, Air Force Systems Command, United States Air Force, L.G. Hanscom Field, Bedford, Massachusetts. |
| 500 | ⊔ | ⊔ | ‡aSolid State Sciences Laboratory Project 5620. |
| 500 | ⊔ | ⊔ | ‡aAD0759786 (From http://www.dtic.mil). |
| 500 | ⊔ | ⊔ | ‡a"24 January 1973." |
| 504 | ⊔ | ⊔ | ‡aIncludes bibliographical references (page 11). |
| 520 | ⊔ | ⊔ | ‡aA high-pressure, high-temperature furnace system is described for crystal growth experiments using crucibles up to 13 cm in diameter and 26 cm high. The vertical temperature gradient is electronically controlled during growth such that the ends of the crucible can be maintained at temperatures above or below the crucible center. Temperatures up to 2800C can be maintained at pressures up to 50 atmospheres. A vacuum capability up to .000001 torr at 1800C has been incorporated into the system. Single crystals of alpha silicon carbide grown in this system at 2600C are described to illustrate its use. (Author). |
| 538 | ⊔ | ⊔ | ‡aMode of access: Internet. |
| 650 | ⊔ | 7 | ‡aSilicon carbide. ‡2fast ‡0(OCoLC)fst01118657 |
| 650 | ⊔ | 7 | ‡aHigh temperatures. ‡2fast ‡0(OCoLC)fst00956494 |
| 650 | ⊔ | 7 | ‡aHigh pressure (Technology) ‡2fast ‡0(OCoLC)fst00956053 |
| 650 | ⊔ | 7 | ‡aFurnaces. ‡2fast ‡0(OCoLC)fst00936452 |
| 650 | ⊔ | 7 | ‡aCrystal growth. ‡2fast ‡0(OCoLC)fst00884619 |
| 650 | ⊔ | 0 | ‡aHigh pressure (Technology) |
| 650 | ⊔ | 0 | ‡aHigh temperatures. |
| 650 | ⊔ | 0 | ‡aFurnaces. |
| 650 | ⊔ | 0 | ‡aCrystal growth. |
| 650 | ⊔ | 0 | ‡aSilicon carbide. |
| 700 | 1 | ⊔ | ‡aBerman, I., ‡eauthor. |
| 700 | 1 | ⊔ | ‡aHawley, J. J., ‡eauthor. |
| 700 | 1 | ⊔ | ‡aRyan, C. E. ‡q(Charles Edward), ‡d1938- ‡eauthor. |
| 700 | 1 | ⊔ | ‡aMarshall, Robert C., ‡eauthor. |
| 710 | 2 | ⊔ | ‡aAir Force Cambridge Research Laboratories (U.S.), ‡esponsor. |
| 730 | 0 | ⊔ | ‡aTechnical Report Archive & Image Library (TRAIL) |
| 899 | ⊔ | ⊔ | ‡a39015095325539 |
| CID | ⊔ | ⊔ | ‡a102893630 |
| DAT | 0 | ⊔ | ‡a20220802101950.0 ‡b20230928000000.0 |
| DAT | 1 | ⊔ | ‡a20230928062550.0 ‡b2024-08-07T17:32:04Z |
| CAT | ⊔ | ⊔ | ‡aSDR-MIU ‡cmiu ‡dALMA ‡lprepare.pl-004-008 |
| FMT | ⊔ | ⊔ | ‡aBK |
| HOL | ⊔ | ⊔ | ‡0sdr-miu.99187626098306381 ‡aMiU ‡bSDR ‡cGWLA ‡pmdp.39015095325539 ‡sMIU ‡199187626098306381 |
| 974 | ⊔ | ⊔ | ‡bMIU ‡cGWLA ‡d20240807 ‡sgoogle ‡umdp.39015095325539 ‡y1973 ‡rpd ‡qbib ‡tUS fed doc |