A unique high-temperature, high-pressure crystal growth system for silicon carbide /
J.R. Littler [and 4 others].

APA Citation

Littler, J. R.., Berman, I., Hawley, J. J.., Ryan, C. E. (Charles Edward)., Marshall, R. C.., Air Force Cambridge Research Laboratories (U.S.). (1973). A unique high-temperature, high-pressure crystal growth system for silicon carbide. L.G. Hanscom Field, Bedfor, Massachusetts: Air Force Cambridge Research Laboratories, Air Force Systems Command, United States Air Force.

MLA Citation

Air Force Cambridge Research Laboratories (U.S.), et al.. A Unique High-temperature, High-pressure Crystal Growth System for Silicon Carbide. L.G. Hanscom Field, Bedfor, Massachusetts: Air Force Cambridge Research Laboratories, Air Force Systems Command, United States Air Force, 1973.