Polytypes of SiC crystals grown from molten silicon

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086 0 ⊔ ‡aD 301.45/4-3:70-0492
086 0 ⊔ ‡aD 301.45/64:83
088 ⊔ ⊔ ‡aAD 0712022
088 ⊔ ⊔ ‡aAFCRL 70-492
100 1 ⊔ ‡aInomata, Yoshiz©Æo, ‡eauthor.
245 1 0 ‡aPolytypes of SiC crystals grown from molten silicon / ‡cYoshizo Inomata [and 3 others].
264 ⊔ 1 ‡aL.G. Hanscom Field, Bedford, Massachusetts : ‡bAir Force Cambridge Research Laboratories, United States Air Force, ‡c1970.
300 ⊔ ⊔ ‡avi, 12 pages : ‡billustrations, tables ; ‡c28 cm.
336 ⊔ ⊔ ‡atext ‡btxt ‡2rdacontent
337 ⊔ ⊔ ‡aunmediated ‡bn ‡2rdamedia
338 ⊔ ⊔ ‡avolume ‡bnc ‡2rdacarrier
490 0 ⊔ ‡aAFCRL ; ‡v70-0492
490 0 ⊔ ‡aTranslations ; ‡vNo. 83
500 ⊔ ⊔ ‡aTranslation supported by the Air Force Cambridge Research Laboratories, Office of Aerospace Research, United States Air Force (L.G. Hanscom Field, Mass.), and translated by the Oriental Science Research Library of Emmanuel College, Boston, Massachusetts, under Contract F19628-68-C-0251.
500 ⊔ ⊔ ‡aTranslated from Ceramic Association of Japan: Journal (Yogyo Kyokai-Shi), v. 77, n. 3, pp. 83-88, 1969.
500 ⊔ ⊔ ‡aAFCRL Research Library.
500 ⊔ ⊔ ‡aAD0712022 (from http://www.dtic.mil).
500 ⊔ ⊔ ‡a"19 August 1970."
504 ⊔ ⊔ ‡aIncludes bibliographical references (pages 11-12).
520 ⊔ ⊔ ‡aThe relationship between the polytypes of SiC and the supersaturation of the solution has been studied at 1800C with the synthetic method using molten silicon.
538 ⊔ ⊔ ‡aMode of access: Internet.
650 ⊔ 7 ‡aSilicon carbide. ‡2fast ‡0(OCoLC)fst01118657
650 ⊔ 7 ‡aCrystals ‡xStructure. ‡2fast ‡0(OCoLC)fst00884694
650 ⊔ 7 ‡aCrystallography. ‡2fast ‡0(OCoLC)fst00884652
650 ⊔ 7 ‡aCrystal growth. ‡2fast ‡0(OCoLC)fst00884619
650 ⊔ 0 ‡aCrystallography.
650 ⊔ 0 ‡aCrystals ‡xStructure.
650 ⊔ 0 ‡aCrystal growth.
650 ⊔ 0 ‡aSilicon carbide.
710 2 ⊔ ‡aAir Force Cambridge Research Laboratories (U.S.)
730 0 ⊔ ‡aTechnical Report Archive & Image Library (TRAIL)
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