The dopant density and temperature dependence of electron mobility and resistivity in n-type silicon /
Sheng S. Li.

Description

Main Author

Li, Sheng S., 1938-

Related Names

United States. National Bureau of Standards.

Language(s)

English

Published

Washington, D.C. : U.S. Dept. of Commerce, National Bureau of Standards : 1977.

Subjects

Electric resistance.
Electron mobility.
Semiconductor doping.
Silicon > Silicon / Electric properties.

Physical Description

vii, 28 p. : ill. ; 26 cm.

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