The dopant density and temperature dependence of electron mobility and resistivity in n-type silicon /
Sheng S. Li.

APA Citation

Li, S. S. (1977). The dopant density and temperature dependence of electron mobility and resistivity in n-type silicon. Washington, D.C.: U.S. Dept. of Commerce, National Bureau of Standards .

MLA Citation

Li, Sheng S., 1938-. The Dopant Density And Temperature Dependence of Electron Mobility And Resistivity In N-type Silicon. Washington, D.C.: U.S. Dept. of Commerce, National Bureau of Standards , 1977.