The theoretical and experimental study of the temperature and dopant density dependence of hole mobility, effective mass, and resistivity in boron-doped silicon /
Sheng S. Li.

Description

Main Author

Li, Sheng S., 1938-

Related Names

National Science Foundation (U.S.)
United States. Defense Advanced Research Projects Agency.

Language(s)

English

Published

Washington : U.S. Dept. of Commerce, National Bureau of Standards : 1979.

Subjects

Silicon > Silicon / Defects.
Semiconductor doping.
Holes (Electron deficiencies)

Note

"This activity was supported by the Defense Advanced Research Projects Agency and the National Science Foundation."

Physical Description

vi, 42 p. : graphs ; 26 cm.

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