X-Ray topographic observations of slip distributions in alpha silicon carbide /
Harold Posen, Jane A. Bruce.

Description

Main Author

Posen, Harold

Related Names

Bruce, Jane A., author.
Air Force Cambridge Research Laboratories (U.S.)

Language(s)

English

Published

L.G. Hanscom Field, Massachusetts : Air Force Cambridge Research Laboratories, Air Force System Command, United States Air Force, 1972.

Subjects

X-rays > X-rays / Diffraction.
Silicon carbide.
Crystals > Crystals / Defects.
Crystals > Crystals / Defects.
X-rays > X-rays / Diffraction.
Silicon carbide.

Summary

An x-ray topographic study is made of three hexagonal SiC crystals, type 6H, of different national origin. All three crystals exhibit a high density of dislocations, many originating at the nucleation edge of the crystal and fanning out to the crystal boundaries. Burgers vectors were identified. Slip in the (1,1,-2,0) direction, characteristic of hexagonal materials, was observed. (Author).

Note

Research supported by the Air Force Cambridge Research Laboratories, Air Force Systems Command, United States Air Force, L.G. Hanscom Field, Bedford, Massachusetts.
Solid State Sciences Laboratory Project 5620.
AD0744076 (from http://www.dtic.mil).
"30 March 1972."

Physical Description

vi, 13 pages : illustrations ; 28 cm.

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