III-V compound semiconductor dopant profiling using scanning spreading resistance microscopy

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035 ‡asdr-ucsd.b4371710x
040 ‡aCUS ‡cCUS ‡dUtOrBLW
035 ‡a(OCoLC)50256822
100 1 ‡aLu, Ryan P. ‡q(Ryan Paul)
245 1 0 ‡aIII-V compound semiconductor dopant profiling using scanning spreading resistance microscopy / ‡cby Ryna P. Lu
260 ‡c2002
300 ‡axix, 156 leaves : ‡billustrations ; ‡c28 cm
336 ‡atext ‡2rdacontent
337 ‡aunmediated ‡2rdamedia
338 ‡avolume ‡2rdacarrier
500 ‡aVita
502 ‡bPh. D. ‡cUniversity of California, San Diego ‡d2002
504 ‡aIncludes bibliographical references
530 ‡aAlso issued online
538 ‡aMode of access: Internet.
655 7 ‡aDissertations, Academic ‡zUCSD ‡xElectrical engineering. ‡2local
CID ‡a102468055
DAT 0 ‡a20141205022221.0 ‡b20181009000000.0
DAT 1 ‡a20181010090810.0 ‡b2024-09-19T17:49:40Z
CAT ‡aSDR-UCSD ‡dIII - MILLENIUM ‡lprepare.pl-004-007
FMT ‡aBK
HOL ‡0sdr-ucsd.b4371710x ‡auc1 ‡bSDR ‡cUCSD ‡puc1.31822009313297 ‡sUC ‡1.b4371710x
974 ‡bUC ‡cUCSD ‡d20240919 ‡sgoogle ‡uuc1.31822009313297 ‡y2002 ‡ric ‡qbib ‡tnon-US bib date1 >= 1929