| LDR | 02930cam a2200493Ii 4500 | ||
| 001 | 102326110 | ||
| 003 | MiAaHDL | ||
| 005 | 20220618000000.0 | ||
| 006 | m d | ||
| 007 | cr bn ---auaua | ||
| 008 | 090610e197209 maua bt f000 0 eng d | ||
| 035 | ⊔ | ⊔ | ‡a(MiU)990161180910106381 |
| 035 | ⊔ | ⊔ | ‡asdr-miu.990161180910106381 |
| 035 | ⊔ | ⊔ | ‡z(MiU)MIU01000000000000016118091-goog |
| 035 | ⊔ | ⊔ | ‡a(OCoLC)385062241 |
| 035 | ⊔ | ⊔ | ‡z(MiU)Aleph016118091 |
| 040 | ⊔ | ⊔ | ‡aLHL ‡beng ‡erda ‡cLHL ‡dOCLCF ‡dOCLCO ‡dOCLCQ ‡dCOD ‡dTRAAL |
| 049 | ⊔ | ⊔ | ‡aMAIN |
| 086 | 0 | ⊔ | ‡aD 3.1.45/4-3:72-0527 |
| 086 | 0 | ⊔ | ‡aD 301.45/64:99 |
| 088 | ⊔ | ⊔ | ‡aAD 0752227 |
| 088 | ⊔ | ⊔ | ‡aAFCRL 72-527 |
| 100 | 1 | ⊔ | ‡aInomata, Yoshizō, ‡eauthor. |
| 245 | 1 | 0 | ‡aOn the synthesis of SiC single crystals / ‡cYoshizo Inomata, Hirokichi Tananka. |
| 264 | ⊔ | 1 | ‡aL.G. Hanscom Field, Bedford, Massachusetts : ‡bAir Force Cambridge Research Laboratories, Air Force Systems Command, United States Air Force, ‡c1972. |
| 300 | ⊔ | ⊔ | ‡av, 9 pages : ‡billustrations ; ‡c28 cm. |
| 336 | ⊔ | ⊔ | ‡atext ‡btxt ‡2rdacontent |
| 337 | ⊔ | ⊔ | ‡aunmediated ‡bn ‡2rdamedia |
| 338 | ⊔ | ⊔ | ‡avolume ‡bnc ‡2rdacarrier |
| 490 | 0 | ⊔ | ‡aAFCRL ; ‡v72-0527 |
| 490 | 0 | ⊔ | ‡aTranslations (Air Force Cambridge Research Laboratories (U.S.)) ; ‡vNo. 99 |
| 500 | ⊔ | ⊔ | ‡aTranslation supported by the Air Force Cambridge Research Laboratories, Air Force Systems Command, United States Air Force (L.G. Hanscom Field, Mass.), and translated by the Oriental Science Research Library of Emmanuel College, Boston, Massachusetts, under Contract F19628-71-C-0121. |
| 500 | ⊔ | ⊔ | ‡aTranslated from Ceramic Society of Japan Journal (Yogyo Kyokai-Shi). v. 79, n. 10, pp. 392-395, 1971. |
| 500 | ⊔ | ⊔ | ‡aAFCRL Research Library. |
| 500 | ⊔ | ⊔ | ‡aAD0752227 (from http://www.dtic.mil). |
| 500 | ⊔ | ⊔ | ‡a"5 September 1972." |
| 504 | ⊔ | ⊔ | ‡aIncludes bibliographical references (page 9). |
| 520 | ⊔ | ⊔ | ‡aA method is proposed to synthesize SiC single crystals free of carbon particle inclusions. An empty graphite crucible is connected with the crucible containing silicon melt by means of a graphite pipe. The former crucible is heated to approximately 2,500C, as in the ordinary sublimation process, while the temperature of the latter is lowered. Crystal growth is accomplished in the empty crucible. The experiments conducted are preliminary. Problems such as damages to the crucible containing silicon melt, prevention of silicon leak, and control of the amount of silicon supply to the growth cavity are examined. The structure of the furnace necessary for the implementation of the method is discussed. |
| 538 | ⊔ | ⊔ | ‡aMode of access: Internet. |
| 650 | ⊔ | 7 | ‡aSilicon carbide. ‡2fast ‡0(OCoLC)fst01118657 |
| 650 | ⊔ | 7 | ‡aCrystals. ‡2fast ‡0(OCoLC)fst00884667 |
| 650 | ⊔ | 7 | ‡aCrystal growth. ‡2fast ‡0(OCoLC)fst00884619 |
| 650 | ⊔ | 0 | ‡aCrystals. |
| 650 | ⊔ | 0 | ‡aCrystal growth. |
| 650 | ⊔ | 0 | ‡aSilicon carbide. |
| 700 | 1 | ⊔ | ‡aTanaka, Hirokichi., ‡eauthor. |
| 710 | 2 | ⊔ | ‡aAir Force Cambridge Research Laboratories (U.S.) |
| 730 | 0 | ⊔ | ‡aTechnical Report Archive & Image Library (TRAIL) |
| 899 | ⊔ | ⊔ | ‡a39015095142629 |
| CID | ⊔ | ⊔ | ‡a102326110 |
| DAT | 0 | ⊔ | ‡b20220618000000.0 |
| DAT | 1 | ⊔ | ‡a20220619060753.0 ‡b2024-04-27T17:32:35Z |
| DAT | 2 | ⊔ | ‡a2024-04-27T17:30:02Z |
| CAT | ⊔ | ⊔ | ‡aSDR-MIU ‡dALMA ‡lprepare.pl-004-008 |
| FMT | ⊔ | ⊔ | ‡aBK |
| HOL | ⊔ | ⊔ | ‡0sdr-miu.990161180910106381 ‡aMiU ‡bSDR ‡cGWLA ‡pmdp.39015095142629 ‡sMIU ‡1990161180910106381 |
| 974 | ⊔ | ⊔ | ‡bMIU ‡cGWLA ‡d20240427 ‡sgoogle ‡umdp.39015095142629 ‡y1972 ‡rpd ‡qbib ‡tUS fed doc |