Relation between growth temperature and the structure of SiC crystals grown by the sublimation method /
Yoshizo Inomata [and 3 others].

APA Citation

Inomata, Y., Suzuki, H., Mitomo, M., Inoue, Z., Air Force Cambridge Research Laboratories (U.S.). (1969). Relation between growth temperature and the structure of SiC crystals grown by the sublimation method. L.G. Hanscom Field, Bedford, Massachusetts: Air Force Cambridge Research Laboratories, Office of Aerospace Research, United States Air Force.

MLA Citation

Air Force Cambridge Research Laboratories (U.S.), et al.. Relation Between Growth Temperature And the Structure of SiC Crystals Grown by the Sublimation Method. L.G. Hanscom Field, Bedford, Massachusetts: Air Force Cambridge Research Laboratories, Office of Aerospace Research, United States Air Force, 1969.