Catalog Record: Determination of oxygen content in germanium and silicon by He³ ion activation | HathiTrust Digital Library

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Determination of oxygen content in germanium and silicon by He³ ion activation /
G.I. Aleksandrova [and 6 others].

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Main Author: Aleksandrova, G. I.,
Related Names: Shmanenkova, G. I. , Choporov, D. Ya. , Sukhov, G. V. , Pleshakova, G. P. , Kotel℗ʹnikov, G. A. , Demidov, A. M.
Language(s): English
Published: L.G. Hanscom Field, Bedford, Massachusetts : Air Force Cambridge Research Laboratories, Office of Aerospace Research, United States Air Force, 1968.
Subjects: Gamma ray spectrometry.
Semiconductors > Semiconductors / Silicon.
Semiconductors > Semiconductors / Germanium.
Nuclear activation analysis.
Oxygen.
Note: Translation supported by the Air Force Cambridge Research Laboratories, Office of Aerospace Research, United States Air Force (L.G. Hanscom Field, Mass.), and translated by Transtek Associates, Reading, Massachusetts.
Translated from State Committee for the Use of Atomic Energy in the USSR I.V. Kurchatov Institute of Atomic Energy.
Other authors listed on title page: A.M. Demidov, G.A. Kotel'nikov, G.P. Pleshakova, G.V. Sukhov, D. Ya Choporov, G.I. Shmanenkova.
AFCRL Research Library.
AD0680364 (from http://www.dtic.mil).
"September 1968."
Physical Description: v, 11 pages : illustrations ; 28 cm.
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