Catalog Record: Epitaxial growth of 6H silicon carbide in the temperature range 1320 ̊to 1390 ̊C | HathiTrust Digital Library

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Epitaxial growth of 6H silicon carbide in the temperature range 1320 ̊to 1390 ̊C /
by Herbert A. Will and J. Anthony Powell.

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Main Author: Will, Herbert A.
Related Names: Powell, J. Anthony.
Language(s): English
Published: Washington, D.C. : National Aeronautics and Space Administration ; 1974.
Subjects: Semiconductors.
Crystal growth.
Silicon carbide.
Epitaxy.
Note: Prepared at Lewis Research Center.
Cover title.
Physical Description: 14 p. : ill. ; 27 cm.
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