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| 001 | 011445817 | ||
| 003 | MiAaHDL | ||
| 005 | 20141009010000.0 | ||
| 006 | m d | ||
| 007 | cr bn ---auaua | ||
| 008 | 920221m19689999dcua b f000 0 eng d | ||
| 035 | ⊔ | ⊔ | ‡asdr-uiuc6395344 |
| 035 | ⊔ | ⊔ | ‡a(OCoLC)25316147 |
| 040 | ⊔ | ⊔ | ‡aABC ‡cABC ‡dBUF ‡dOCLCG |
| 049 | ⊔ | ⊔ | ‡aUIUU |
| 050 | ⊔ | 4 | ‡aTL521 ‡b.A3525 no. 4620, etc. |
| 100 | 1 | ⊔ | ‡aBeen, Julian F. |
| 245 | 1 | 0 | ‡aEffects of nuclear radiation on a high-reliability silicon power diode / ‡cby Julian F. Been. |
| 260 | ⊔ | ⊔ | ‡aWashington, D.C. : ‡bNational Aeronautics and Space Administration ; ‡a[Springfield, Va. : ‡bFor sale by the National Technical Information Service], ‡c1968- |
| 300 | ⊔ | ⊔ | ‡av. : ‡bill. ; ‡c27 cm. |
| 490 | 0 | ⊔ | ‡aNASA technical note ; ‡vNASA TN D-4620, 5732, 6330, 7423, etc. |
| 500 | ⊔ | ⊔ | ‡aPart 2 also by Ira T. Myers and Michael P. Godlewski. |
| 500 | ⊔ | ⊔ | ‡aPrepared at Lewis Research Center. |
| 500 | ⊔ | ⊔ | ‡aCover title. |
| 504 | ⊔ | ⊔ | ‡aIncludes bibliographical references. |
| 505 | 1 | ⊔ | ‡a1. Change in 1-5 design characteristics -- 2. Analysis of forward electrical characteristics -- 3. Junction capacitance -- 4. Analysis of reverse bias characteristics -- |
| 538 | ⊔ | ⊔ | ‡aMode of access: Internet. |
| 650 | ⊔ | 0 | ‡aSilicon diodes ‡xMaterials ‡xEffect of radiation on. |
| 700 | 1 | ⊔ | ‡aGodlewski, Michael P. |
| 700 | 1 | ⊔ | ‡aMyers, Ira T. ‡q(Ira Thomas), ‡d1925- |
| 710 | 2 | ⊔ | ‡aLewis Research Center. |
| CID | ⊔ | ⊔ | ‡a011445817 |
| DAT | 0 | ⊔ | ‡a20101104143726.0 ‡b20141009010000.0 |
| DAT | 1 | ⊔ | ‡a20141112165512.0 ‡b2024-01-26T18:55:12Z |
| CAT | ⊔ | ⊔ | ‡aSDR-UIUC ‡dUNKNOWN ‡lloader.pl-003-020 |
| FMT | ⊔ | ⊔ | ‡aBK |
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