00650cam a22001937a 4500009234839MiAaHDL20240402000000.0m d cr bn ---auaua961021s1996 xx a b 000 0 eng dsdr-coo.2852202(COO)Voyager2852202(OCoLC)64049263(NIC)notisAPA2269NICNICNICEdwards, William John.Dopant implantation and oxidation of polycrystalline silicon-germanium films /by William John Edwards.1996.xiii, 145 leaves :ill. ;29 cm.Ph.D.Cornell UniversityJanuary 1996Includes bibliographical references (leaves 140-145).Mode of access: Internet.00923483920220306183919.020240402000000.020240402145850.02024-07-16T17:39:46ZSDR-COOcooFOLIOprepare.pl-004-008BKsdr-coo.2852202cooSDRCOO2852202coo.31924074525886COO2852202COOCOO20240716googlecoo.319240745258861996icbibnon-US bib date1 >= 1931