| LDR | 00650cam a22001937a 4500 | ||
| 001 | 009234839 | ||
| 003 | MiAaHDL | ||
| 005 | 20240402000000.0 | ||
| 006 | m d | ||
| 007 | cr bn ---auaua | ||
| 008 | 961021s1996 xx a b 000 0 eng d | ||
| 035 | ⊔ | ⊔ | ‡asdr-coo.2852202 |
| 035 | ⊔ | ⊔ | ‡z(COO)Voyager2852202 |
| 035 | ⊔ | ⊔ | ‡a(OCoLC)64049263 |
| 035 | ⊔ | ⊔ | ‡a(NIC)notisAPA2269 |
| 040 | ⊔ | ⊔ | ‡aNIC ‡cNIC ‡dNIC |
| 100 | 1 | ⊔ | ‡aEdwards, William John. |
| 245 | 1 | 0 | ‡aDopant implantation and oxidation of polycrystalline silicon-germanium films / ‡cby William John Edwards. |
| 260 | ⊔ | ⊔ | ‡c1996. |
| 300 | ⊔ | ⊔ | ‡axiii, 145 leaves : ‡bill. ; ‡c29 cm. |
| 502 | ⊔ | ⊔ | ‡bPh.D. ‡cCornell University ‡dJanuary 1996 |
| 504 | ⊔ | ⊔ | ‡aIncludes bibliographical references (leaves 140-145). |
| 538 | ⊔ | ⊔ | ‡aMode of access: Internet. |
| CID | ⊔ | ⊔ | ‡a009234839 |
| DAT | 0 | ⊔ | ‡a20220306183919.0 ‡b20240402000000.0 |
| DAT | 1 | ⊔ | ‡a20240402145850.0 ‡b2024-07-16T17:39:46Z |
| CAT | ⊔ | ⊔ | ‡aSDR-COO ‡ccoo ‡dFOLIO ‡lprepare.pl-004-008 |
| FMT | ⊔ | ⊔ | ‡aBK |
| HOL | ⊔ | ⊔ | ‡0sdr-coo.2852202 ‡acoo ‡bSDR ‡cCOO ‡f2852202 ‡pcoo.31924074525886 ‡sCOO ‡12852202 |
| 974 | ⊔ | ⊔ | ‡bCOO ‡cCOO ‡d20240716 ‡sgoogle ‡ucoo.31924074525886 ‡y1996 ‡ric ‡qbib ‡tnon-US bib date1 >= 1929 |