The controlled growth of thin GaAs layers by liquid phase epitaxy for microwave field effect transistors

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100 1 ⊔ ‡aMorkoç, Hadis
245 1 4 ‡aThe controlled growth of thin GaAs layers by liquid phase epitaxy for microwave field effect transistors/ ‡cby Hadis Markoç.
260 ⊔ ⊔ ‡a1976.
300 ⊔ ⊔ ‡a[2], xxi, 220 leaves : ‡bill. ; ‡c29 cm.
500 ⊔ ⊔ ‡aPhotocopy of typescript.
502 ⊔ ⊔ ‡bPh.D. ‡cCornell University ‡dJanuary 1976
504 ⊔ ⊔ ‡aBibliography: leaves 215-220.
538 ⊔ ⊔ ‡aMode of access: Internet.
650 ⊔ 7 ‡aGallium arsenide ‡2fast ‡0(OCoLC)fst00937273
650 ⊔ 7 ‡aField-effect transistors ‡2fast ‡0(OCoLC)fst00923928
650 ⊔ 7 ‡aEpitaxy ‡2fast ‡0(OCoLC)fst00914372
650 ⊔ 0 ‡aEpitaxy
650 ⊔ 0 ‡aGallium arsenide.
650 ⊔ 0 ‡aField-effect transistors
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