Permanent damage effects of nuclear radiation on the X-band performance of silicon Schottky-barrier microwave mixer diodes /
James M. Kenney ; Electronic Technology Division.

Description

Main Author

Kenney, James M.

Related Names

United States. Defense Nuclear Agency.
Institute for Applied Technology (U.S.). Electronic Technology Division.

Language(s)

English

Published

Washington : U.S. Dept. of Commerce, National Bureau of Standards, Institute for Applied Technology, Electronic Technology Division : 1976.

Subjects

Microwave measurements.
Mixing circuits.
Diodes, Schottky-barrier > Diodes, Schottky-barrier / Effect of radiation on.

Note

S/N 003-003-01635-7.
Item 247.
Activity supported in cooperation with the Defense Nuclear Agency.
CODEN: XNBSAV.

Physical Description

[2], 26, [1] p. : ill. ; 26 cm.

Locate a Print Version

Find in a library

Viewability