Permanent damage effects of nuclear radiation on the X-band performance of silicon Schottky-barrier microwave mixer diodes /
James M. Kenney ; Electronic Technology Division.

Description

Main Author: Kenney, James M.
Related Names: United States. Defense Nuclear Agency.
Institute for Applied Technology (U.S.). Electronic Technology Division.
Language(s): English
Published: Washington : U.S. Dept. of Commerce, National Bureau of Standards, Institute for Applied Technology, Electronic Technology Division : 1976.
Subjects: Microwave measurements.
Mixing circuits.
Diodes, Schottky-barrier > Diodes, Schottky-barrier / Effect of radiation on.
Note: S/N 003-003-01635-7.
Item 247.
Activity supported in cooperation with the Defense Nuclear Agency.
CODEN: XNBSAV.
Physical Description: [2], 26, [1] p. : ill. ; 26 cm.
Locate a Print Version: Find in a library

Item Link	Original Source
Full view	Technical Report Archive & Image Library
Full view	University of California
Full view 400-7	University of Illinois at Urbana-Champaign