Microelectronic test pattern NBS-3 for evaluating the resistivity-dopant density relationship of silicon /
Martin G. Buehler.
APA Citation
Buehler, M. G. (1976). Microelectronic test pattern NBS-3 for evaluating the resistivity-dopant density relationship of silicon. [Washington]: U.S. Dept. of Commerce, National Bureau of Standards .
MLA Citation
Buehler, Martin G. Microelectronic Test Pattern NBS-3 for Evaluating the Resistivity-dopant Density Relationship of Silicon. [Washington]: U.S. Dept. of Commerce, National Bureau of Standards , 1976.
Warning: These citations may not always be complete (especially for serials).