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| 100 | 1 | ⊔ | ‡aBuehler, Martin G. |
| 245 | 1 | 0 | ‡aMicroelectronic test pattern NBS-3 for evaluating the resistivity-dopant density relationship of silicon / ‡cMartin G. Buehler. |
| 260 | ⊔ | ⊔ | ‡a[Washington] : ‡bU.S. Dept. of Commerce, National Bureau of Standards : ‡bFor sale by the Supt. of Docs., U.S. Govt. Print. Off., ‡c1976. |
| 300 | ⊔ | ⊔ | ‡avi, 49 p. : ‡bill. ; ‡c26 cm. |
| 490 | ⊔ | 0 | ‡aSemiconductor measurement technology |
| 490 | 0 | ⊔ | ‡aNBS special publication ; ‡v400-22 |
| 504 | ⊔ | ⊔ | ‡aIncludes bibliographical references. |
| 538 | ⊔ | ⊔ | ‡aMode of access: Internet. |
| 650 | ⊔ | 7 | ‡aMicroélectronique. ‡2ram |
| 650 | ⊔ | 7 | ‡aSilicium ‡xEssais. ‡2ram |
| 650 | ⊔ | 7 | ‡aSemiconducteurs ‡xEssais. ‡2ram |
| 650 | ⊔ | 0 | ‡aMicroelectronics. |
| 650 | ⊔ | 0 | ‡aSilicon ‡xTesting. |
| 650 | ⊔ | 0 | ‡aSemiconductors ‡xTesting. |
| 740 | 0 | 1 | ‡aMicroelectronic test pattern NBS-3 ... |
| 776 | 0 | 8 | ‡iOnline version: ‡aBuehler, Martin G. ‡tMicroelectronic test pattern NBS-3 for evaluating the resistivity-dopant density relationship of silicon. ‡d[Washington] : U.S. Dept. of Commerce, National Bureau of Standards : For sale by the Supt. of Docs., U.S. Govt. Print. Off., 1976 ‡w(OCoLC)631232347 |
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