The theoretical and experimental study of the temperature and dopant density dependence of hole mobility, effective mass, and resistivity in boron-doped silicon /
Sheng S. Li.

APA Citation

Li, S. S., National Science Foundation (U.S.)., United States. Defense Advanced Research Projects Agency. (1979). The theoretical and experimental study of the temperature and dopant density dependence of hole mobility, effective mass, and resistivity in boron-doped silicon. Washington: U.S. Dept. of Commerce, National Bureau of Standards .

MLA Citation

Li, Sheng S., 1938-, National Science Foundation (U.S.), and United States. Defense Advanced Research Projects Agency. The Theoretical And Experimental Study of the Temperature And Dopant Density Dependence of Hole Mobility, Effective Mass, And Resistivity In Boron-doped Silicon. Washington: U.S. Dept. of Commerce, National Bureau of Standards , 1979.