Technical impediments to a more effective utilization of neutron transmutation doped silicon for high-power device fabrication /
D.R. Myers ; sponsored by Division of Electric Energy Systems, Department of Energy.
|Main Author:||Myers, D. R.|
Washington, D.C. : U.S. Dept. of Commerce, National Bureau of Standards : 1980.
Silicon > Silicon / Defects.
Semiconductor doping, Neutron transmutation.
"Issued May 1980."
iii, 29 p. ;
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