Catalog Record: Technical impediments to a more effective utilization of neutron transmutation doped silicon for high-power device fabrication | HathiTrust Digital Library

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Technical impediments to a more effective utilization of neutron transmutation doped silicon for high-power device fabrication /
D.R. Myers ; sponsored by Division of Electric Energy Systems, Department of Energy.

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Main Author: Myers, D. R.
Language(s): English
Published: Washington, D.C. : U.S. Dept. of Commerce, National Bureau of Standards : 1980.
Subjects: Thyristors.
Power semiconductors.
Silicon > Silicon / Defects.
Semiconductor doping, Neutron transmutation.
Note: "Issued May 1980."
Physical Description: iii, 29 p. ; 26 cm.
ISBN:
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