A FORTRAN program for calculating the electrical parameters of extrinsic silicon

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100 1 ‡aLarrabee, R. D.
245 1 2 ‡aA FORTRAN program for calculating the electrical parameters of extrinsic silicon / ‡cR.D. Larrabee, W.R. Thurber, and W.M. Bullis.
246 1 6 ‡aSemiconductor measurement technology.
260 ‡aWashington, D.C. : ‡bU.S. Dept. of Commerce, National Bureau of Standards : ‡bFor sale by the Supt. of Docs., U.S. G.P.O., ‡c1980.
300 ‡aiv, 48 p. ; ‡c27 cm.
490 0 ‡aU.S. Department of Commerce National Bureau of Standards special publication ; ‡v400-63
500 ‡aItem 247.
500 ‡aS/N 003-003-02260-8.
500 ‡a"Issued October 1980."
500 ‡a"Electron Devices Division, Center for Electronics and Electrical Engineering, National Engineering Laboratory, National Bureau of Standards."
504 ‡aIncludes bibliographical references.
538 ‡aMode of access: Internet.
650 0 ‡aFORTRAN (Computer program language)
650 0 ‡aSilicon ‡xElectric properties ‡xData processing.
700 1 ‡aBullis, W. Murray, ‡d1930-
700 1 ‡aThurber, W. Robert.
710 1 ‡aUnited States. ‡bNational Bureau of Standards. ‡tSpecial publication.
710 2 ‡aCenter for Electronics and Electrical Engineering (U.S.). ‡bElectron Devices Division.
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