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‡a80600158
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‡aC 13.10:P400-63
|
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1 |
⊔ |
‡aLarrabee, R. D.
|
245 |
1 |
2 |
‡aA FORTRAN program for calculating the electrical parameters of extrinsic silicon /
‡cR.D. Larrabee, W.R. Thurber, and W.M. Bullis.
|
246 |
1 |
6 |
‡aSemiconductor measurement technology.
|
260 |
⊔ |
⊔ |
‡aWashington, D.C. :
‡bU.S. Dept. of Commerce, National Bureau of Standards :
‡bFor sale by the Supt. of Docs., U.S. G.P.O.,
‡c1980.
|
300 |
⊔ |
⊔ |
‡aiv, 48 p. ;
‡c27 cm.
|
490 |
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⊔ |
‡aU.S. Department of Commerce National Bureau of Standards special publication ;
‡v400-63
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⊔ |
⊔ |
‡aItem 247.
|
500 |
⊔ |
⊔ |
‡aS/N 003-003-02260-8.
|
500 |
⊔ |
⊔ |
‡a"Issued October 1980."
|
500 |
⊔ |
⊔ |
‡a"Electron Devices Division, Center for Electronics and Electrical Engineering, National Engineering Laboratory, National Bureau of Standards."
|
504 |
⊔ |
⊔ |
‡aIncludes bibliographical references.
|
538 |
⊔ |
⊔ |
‡aMode of access: Internet.
|
650 |
⊔ |
0 |
‡aFORTRAN (Computer program language)
|
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⊔ |
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‡aSilicon
‡xElectric properties
‡xData processing.
|
700 |
1 |
⊔ |
‡aBullis, W. Murray,
‡d1930-
|
700 |
1 |
⊔ |
‡aThurber, W. Robert.
|
710 |
1 |
⊔ |
‡aUnited States.
‡bNational Bureau of Standards.
‡tSpecial publication.
|
710 |
2 |
⊔ |
‡aCenter for Electronics and Electrical Engineering (U.S.).
‡bElectron Devices Division.
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899 |
⊔ |
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