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830928s1981 dcu b f000 0 eng |
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‡a81600052
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‡aC 13.10:400-64
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‡aThe Relationship between resistivity and dopant density for phosphorus- and boron-doped silicon /
‡cW.R. Thurber ... [et al.].
|
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‡aSemiconductor measurement technology.
|
260 |
⊔ |
⊔ |
‡aWashington, D.C. :
‡bU.S. Dept. of Commerce, National Bureau of Standards :
‡bFor sale by the Supt. of Docs., U.S. G.P.O.,
‡c[1981]
|
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‡av, 47 p. ;
‡c26 cm.
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‡aU.S. Department of Commerce National Bureau of Standards special publication ;
‡v400-64
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‡a"Issued May 1981."
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‡aIncludes bibliographical references.
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‡aMode of access: Internet.
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‡aElectric resistance.
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‡aElectron mobility.
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‡aSemiconductor doping.
|
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‡aSilicon
‡xDefects.
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‡aFilliben, J. J.
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‡aLiu, Y. M.
‡q(Yan M.)
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‡aMattis, R. L.
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‡aThurber, W. Robert.
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‡aUnited States.
‡bNational Bureau of Standards.
‡tSpecial publication.
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