The Relationship between resistivity and dopant density for phosphorus- and boron-doped silicon

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245 0 4 ‡aThe Relationship between resistivity and dopant density for phosphorus- and boron-doped silicon / ‡cW.R. Thurber ... [et al.].
246 1 6 ‡aSemiconductor measurement technology.
260 ‡aWashington, D.C. : ‡bU.S. Dept. of Commerce, National Bureau of Standards : ‡bFor sale by the Supt. of Docs., U.S. G.P.O., ‡c[1981]
300 ‡av, 47 p. ; ‡c26 cm.
490 0 ‡aU.S. Department of Commerce National Bureau of Standards special publication ; ‡v400-64
500 ‡a"Issued May 1981."
504 ‡aIncludes bibliographical references.
538 ‡aMode of access: Internet.
650 0 ‡aElectric resistance.
650 0 ‡aElectron mobility.
650 0 ‡aSemiconductor doping.
650 0 ‡aSilicon ‡xDefects.
700 1 ‡aFilliben, J. J.
700 1 ‡aLiu, Y. M. ‡q(Yan M.)
700 1 ‡aMattis, R. L.
700 1 ‡aThurber, W. Robert.
710 1 ‡aUnited States. ‡bNational Bureau of Standards. ‡tSpecial publication.
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