Laser annealing of semiconductors

LDR 00993nam a22003011a 4500
001 000273617
003 MiAaHDL
005 20220528000000.0
006 m d
007 cr bn ---auaua
008 880718s1982 nyua b 10100 eng
010 ‡a82008816
020 ‡a0125588208
035 ‡a(MiU)990002736170106381
035 ‡asdr-miu.990002736170106381
035 ‡z(MiU)MIU01000000000000000273617-goog
035 ‡a(OCoLC)8476544
035 ‡a(CaOTULAS)160502205
035 ‡a(RLIN)MIUG83-B7101
035 ‡z(MiU)Aleph000273617
050 0 ‡aTA1673 ‡b.L34 1982
082 0 ‡a621.3815/2 ‡219
245 0 0 ‡aLaser annealing of semiconductors / ‡cedited by J.M. Poate, James W. Mayer.
260 ‡aNew York : ‡bAcademic Press, ‡c1982.
300 ‡axi, 564 p. ‡bill. ; ‡c24 cm.
504 ‡aIncludes bibliographies and index.
538 ‡aMode of access: Internet.
650 0 ‡aSemiconductors
650 0 ‡aSemiconductor industry ‡xLaser use in ‡xCongresses.
700 1 ‡aMayer, James W., ‡d1930-
700 1 ‡aPoate, J. M.
899 ‡a39015002124967
CID ‡a000273617
DAT 0 ‡a19880718000000.0 ‡b20220528000000.0
DAT 1 ‡a20220529060727.0 ‡b2023-04-13T17:31:08Z
CAT ‡aSDR-MIU ‡dALMA ‡lprepare.pl-004-008
FMT ‡aBK
HOL ‡0sdr-miu.990002736170106381 ‡aMiU ‡bSDR ‡cMIU ‡pmdp.39015002124967 ‡sMIU ‡1990002736170106381
974 ‡bMIU ‡cMIU ‡d20230413 ‡sgoogle ‡umdp.39015002124967 ‡y1982 ‡ric ‡qbib ‡tUS bib date1 >= 1929