01417cam a2200337Ia 4500011442510MiAaHDL20141009010000.0m d cr bn ---auaua021011s1969 dcua b f000 0 eng dsdr-uiuc6398540(OCoLC)50771997ABCABCOCLCGUIUUTL521.A3525 no. 5119NAS 1.14:D-5119Beatty, Marvin E.(Marvin Eddleman),1940-Annealing of 22-, 40-, and 158-MeV proton damage in n- and p-type silicon /by Marvin E. Beatty III and Gerald F. Hill.Washington, D.C. :National Aeronautics and Space Administration ;Springfield, Va. :For sale by the Clearinghouse for Federal Scientific and Technical Information,[1969]25 p. :ill. ;27 cm.NASA technical note,0499-9339 ;NASA TN D-5119Prepared at Langley Research Center."April 1969"--Cover.Includes bibliographical references (p. 11).Mode of access: Internet.SiliconHeat treatment.Extraterrestrial radiation.Solar cellsMaterialsDefects.Solar cellsMaterialsEffect of radiation on.Silicon, Effect of radiation on.Hill, Gerald Franklin,1939-Langley Research Center.01144251020101108102156.020141009010000.020141112165512.02025-01-01T18:38:57Z2025-01-01T18:30:02ZSDR-UIUCUNKNOWNloader.pl-003-020BKsdr-uiuc6398540uiugSDRUIUCuiug.30112101603329UIU6398540UIUUIUC20250101googleuiug.301121016033291969pdbibUS fed doc