00632cam a22001697a 4500009235940MiAaHDL20240401000000.0m d cr bn ---auaua020307s2001 xx a b 000 0 eng dsdr-coo.4216441(COO)Voyager4216441(OCoLC)51594521NICNICChen, Danny Li-Ping,1974-A study of low-temperature, diethylsilane-based, chemical vapor deposited silicon oxide as a bulk and thin film metal-oxide-semiconductor gate dielectric /by Danny Li-Ping Chen.c2001.xiii, 172 leaves :ill.(some col.) ;29 cm.Ph.D.Cornell UniversityAugust 2001Mode of access: Internet.00923594020220306135703.720240401000000.020240401141907.02025-04-16T17:30:54ZSDR-COOcooFOLIOprepare.pl-004-008BKsdr-coo.4216441cooSDRCOO4216441coo.31924091035166COO4216441COOCOO20250416googlecoo.319240910351662001icbibnon-US bib date1 >= 1931